GROWTH OF GAINAS(P) INP HETEROSTRUCTURES ON NONPLANAR SUBSTRATES USING MOMBE (CBE)/

This investigation reports on the overgrowth of GaInAs(P)/InP heterost ructures on ridges having sidewall angles between 44-degrees and 86-de grees. The ridges were aligned towards the [011] and [011BAR] directio n. The most ideal tracking according to the step was found for the ste epest etched angles with steps directed towards [011]. The growth beha vior on such a facet should allow for a high quality butt joint contac t of two heterostructures devices. The growth in the perpendicular dir ection exhibits a different behavior as corrugations are observed in t he step area. It seems that the different chemical reactivities of the various steps are responsible for the anisotropic growth behavior.