ATOMICALLY CONTROLLED INGAAS INP SUPERLATTICES GROWN BY GAS-SOURCE MEE (MIGRATION-ENHANCED EPITAXY)/

Atomically controlled InGaAs/InP SL structures having different types of heterointerfaces are grown on (001)InP substrates at 350-degrees-C by gas source MEE (migration enhanced epitaxy). RHEED intensity traces exhibit the same shape at the positions of the same type of heteroint erfaces, indicating the formation of the desired heterointerfaces. The Raman spectrum from the SL, having only the InAs-type heterointerface s, is characterized by the absence of GaP-like LO phonon clearly sugge sting the formation of only the InAs-type heterointerfaces, while the SL having InGaP-type interfaces indeed shows the presence of GaP-like LO phonon peak. 4.2 K photoluminescence (PL) spectra for the InGaAs/In P quantum well (QW) structures show a very narrow line width comparabl e to the narrowest line width reported so far. Furthermore, the PL pea k energy variation with well thickness clearly depends on the heteroin terface type.