GROWTH OF INAS INP AND INASP/INP HETEROSTRUCTURES BY CHEMICAL BEAM EPITAXY/

We report for the first time that high quality pseudomorphically strai ned InAs1-xPx/InP and InAs/InP (3% lattice mismatch) superlattices (SL ) and strained multi-quantum wells (SMQWs) can be grown by chemical be am epitaxy (CBE). Structural properties and interface sharpness are in vestigated as a function of growth temperature within a range of 420 t o 540-degrees-C. Interface sharpness, determined through the high reso lution X-ray diffraction analysis of thin (1-5 monolayers) InAs single and multi-quantum well structures, is found to be better than 1 monol ayer over a wide range of growth temperatures (450-490-degrees-C) and high quality SMQWs and SLs were achieved. Moreover, no temperature dep endent variation of thicknesses (growth rates) was observed within the 440-500-degrees-C temperature range. The As versus P incorporation ra tios in ternary InAsP/InP layers were also studied, showing that CBE i s perfectly suited for a successful control of As composition in such heterostructures. Finally, the structural and optical properties of gr own heterostructures, as studied with high resolution X-ray diffractio n, RHEED and low temperatures photoluminescence analysis, indicate tha t pseudomorphic InAsP/InP and InAs/InP SMQWs are compatible with long wavelength (1 to 2 mum) opto-electronic applications.