GROWTH-KINETICS AND INSITU COMPOSITION DETERMINATION OF MIXED-GROUP-VCOMPOUNDS GROWN BY GAS-SOURCE MOLELCULAR BEAM EPITAXY

Authors
TU CW LIANG BW HOU HQ
Citation
Cw. Tu et al., GROWTH-KINETICS AND INSITU COMPOSITION DETERMINATION OF MIXED-GROUP-VCOMPOUNDS GROWN BY GAS-SOURCE MOLELCULAR BEAM EPITAXY, Journal of crystal growth, 127(1-4), 1993, pp. 251-254
Citations number
10
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
251 - 254
Database
ISI
SICI code
0022-0248(1993)127:1-4<251:GAICDO>2.0.ZU;2-N
Abstract
We have developed in situ techniques of determing group-V compositions in GaAsP and InAsP, and a growth kinetics model for these compounds. We have also established the temperature range of validity for the in situ methods. At low substrate temperature, where desorption of As2 an d P2 can be ignored, the in situ methods agree with ex situ determined compositions.