CHEMICAL BEAM EPITAXY OF GA0.5IN0.5P USING TERTIARYBUTYLPHOSPHINE

High quality Ga0.5In0.5P layers were grown by chemical beam epitaxy (C BE) using tertiarybutylphosphine (TBP) instead of the more conventiona l phosphine (PH3) gaseous source. It is shown that the use of TBP lead s to a significant decrease, by at least one decade, of the carbon inc orporation in the epilayers. All-gaseous source CBE GaAs/Ga0.5In0.5P h eterojunction bipolar transistors (HBTs) have been grown and character ized for the first time. TBP grown HBT structure exhibit superior DC g ain current (beta = 80) when compared with similar PH3 grown structure s (beta = 20).