INGAAS INP STRAINED-LAYER QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/

Authors
LOUALICHE S LECORRE A GODEFROY A CLEROT F LECROSNIER D POUDOULEC A SALAUN S
Citation
S. Loualiche et al., INGAAS INP STRAINED-LAYER QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 127(1-4), 1993, pp. 258-260
Citations number
11
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
258 - 260
Database
ISI
SICI code
0022-0248(1993)127:1-4<258:IISQGB>2.0.ZU;2-B
Abstract
Different heterostructures containing InGaAs/InP quantum wells, separa te confinement heterostructures and superlattices are grown by molecul ar beam epitaxy on InP substrates. These layers are grown in tensile a nd compressive strain and their luminescence emission wavelength is ke pt around 1550 nm. The growth parameters (temperature, substrate quali ty) are found to be of prime importance to obtain high quality materia ls.