BLUE AND BLUE-GREEN LASER-DIODES AND LED-BASED DISPLAY DEVICES

We describe the performance of pn junction MOW diode lasers and LEDs w hich are grown on both p-type and n-type GaAs substrates. Efforts to m inimize dislocations by lattice matching the II-VI region to the GaAs substrate in some cases resulted in obtaining dislocation densities be low 10(5) cm-2. We have obtained pulsed high power, high quantum effic iency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED and display devices operate in the blue (490-494 nm) at room temperature.