LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNS GAAS(001) BY USING ELEMENTAL SULFUR SOURCE/

Authors
YONETA M OHISHI M SAITO H HAMASAKI T
Citation
M. Yoneta et al., LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNS GAAS(001) BY USING ELEMENTAL SULFUR SOURCE/, Journal of crystal growth, 127(1-4), 1993, pp. 314-317
Citations number
10
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
314 - 317
Database
ISI
SICI code
0022-0248(1993)127:1-4<314:LMEOZG>2.0.ZU;2-Y
Abstract
We report successful growth of ZnS on GaAs(001) using elemental sulfur and zinc sources. In order to use S, which has a very high vapor pres sure for molecular beam epitaxy, a new type of effusion cell is develo ped. The cell is composed of the effuser and post-heating zones. Not o nly the control of vapor pressure, but also bakeout of the MBE chamber could be achieved. ZnS/GaAs could be grown at temperatures as low as 150-degrees-C using S beam post-heated at 210-degrees-C and convention al Zn beam. Low temperature photoluminescence shows that high quality ZnS films are grown.