FORMATION OF THE ZNTE (001) GAAS INTERFACE

We report on the formation of the ZnTe/(001) GaAs interface by molecul ar beam epitaxy. Techniques include X-ray photoelectron spectroscopy ( XPS), high energy electron diffraction, grazing incidence X-ray diffra ction and high resolution transmission electron microscopy. For film t hicknesses smaller than 5 monolayers (ML), a two-dimensional (2D) grow th of ZnTe on the As-rich c(4X4) reconstructed (001) GaAs surface is d emonstrated. Analysis of the XPS Te3d and Zn2p signals from 1-4 ML thi ck ZnTe films reveals the existence of an interfacial As-Zn bonding st ate. Thus the 2D ZnTe growth on (001) GaAs is initiated by a Ga-As-Zn- Te sequence, in contrast with the GaAs-Te-Cd sequence in CdTe/(001) Ga As growth.