W. Dondl et al., SN AND SB SEGREGATION AND THEIR POSSIBLE USE AS SURFACTANT FOR SHORT-PERIOD SI GE SUPERLATTICES/, Journal of crystal growth, 127(1-4), 1993, pp. 440-442
The incorporation behaviour of antimony and tin in Ge was studied by m
eans of Auger electron spectroscopy. By comparing the measured intensi
ty ratios with a simple incorporation model, we find that Sn is strong
er segregating than antimony. The activation energies are 0.34 and 0.2
7 eV, respectively. Using both materials in order to improve the inter
face sharpness of short-period Si/Ge superlattices, we can show that a
ntimony improves the superlattice structure up to growth temperatures
of 600-degrees-C, while with tin the superlattice growth is destroyed.