SN AND SB SEGREGATION AND THEIR POSSIBLE USE AS SURFACTANT FOR SHORT-PERIOD SI GE SUPERLATTICES/

Citation
W. Dondl et al., SN AND SB SEGREGATION AND THEIR POSSIBLE USE AS SURFACTANT FOR SHORT-PERIOD SI GE SUPERLATTICES/, Journal of crystal growth, 127(1-4), 1993, pp. 440-442
Citations number
6
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
440 - 442
Database
ISI
SICI code
0022-0248(1993)127:1-4<440:SASSAT>2.0.ZU;2-H
Abstract
The incorporation behaviour of antimony and tin in Ge was studied by m eans of Auger electron spectroscopy. By comparing the measured intensi ty ratios with a simple incorporation model, we find that Sn is strong er segregating than antimony. The activation energies are 0.34 and 0.2 7 eV, respectively. Using both materials in order to improve the inter face sharpness of short-period Si/Ge superlattices, we can show that a ntimony improves the superlattice structure up to growth temperatures of 600-degrees-C, while with tin the superlattice growth is destroyed.