INFLUENCE OF GROWTH-CONDITIONS ON THE PHOTOLUMINESCENCE OF PSEUDOMORPHIC MBE GROWN SI1-XGEX QUANTUM-WELLS

Authors
BRUNNER J MENCZIGAR U GAIL M FRIESS E ABSTREITER G
Citation
J. Brunner et al., INFLUENCE OF GROWTH-CONDITIONS ON THE PHOTOLUMINESCENCE OF PSEUDOMORPHIC MBE GROWN SI1-XGEX QUANTUM-WELLS, Journal of crystal growth, 127(1-4), 1993, pp. 443-446
Citations number
14
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
443 - 446
Database
ISI
SICI code
0022-0248(1993)127:1-4<443:IOGOTP>2.0.ZU;2-#
Abstract
The influence of growth conditions on the photoluminescence of SiGe qu antum wells is presented. Growth temperatures above 600-degrees-C are found to be a prerequisite for a good layer quality. The variation of growth rates between 0.25 and 1 angstrom/s, however, has no significan t effect on the spectra. With optimized growth conditions, strong exci tonic dominated quantum well luminescence with line widths below 5 meV has been achieved.