HEAVILY SI OR BE DOPED MBE GAAS GROWN AT LOW-TEMPERATURES

Authors
MCQUAID SA NEWMAN RC MISSOUS M OHAGAN S
Citation
Sa. Mcquaid et al., HEAVILY SI OR BE DOPED MBE GAAS GROWN AT LOW-TEMPERATURES, Journal of crystal growth, 127(1-4), 1993, pp. 515-518
Citations number
12
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
515 - 518
Database
ISI
SICI code
0022-0248(1993)127:1-4<515:HSOBDM>2.0.ZU;2-D
Abstract
Infrared absorption due to the localized vibrational modes of Si and B e has been investigated in low temperature molecular beam epitaxial Ga As. A spectrum from Si(Ga)-V(Ga) has been found, but pairing of Be(Ga) was not detected. Anneals of the Si doped layers led to Si-site switc hing and an apparent loss of silicon from solution. A comparison is ma de with a previous study of neutron irradiated Si doped GaAs.