A. Fischercolbrie et al., NON-LATTICE MATCHED GROWTH OF INXGA1-XAS (0.53-LESS-THAN-X-LESS-THAN-0.80) ON INP, Journal of crystal growth, 127(1-4), 1993, pp. 560-565
The linearly-graded low-temperature buffer (LGLTB) approach developed
by Harmand et al. [1] for growing materials with lattice parameters di
fferent from the substrate was extended to thick layers and minority c
arrier devices, using InxGa1-xAs alloys with x = 0.53 to 0.80 on InP.
Structurally, the device layers were 90% to 100% relaxed with less tha
n mid 10(5) cm-2 threading dislocations. Mobilities for 3 mum thick la
yers as well as modulation-doped structures of In0.80Ga0.20As were as
high as 16,300 cm2/V.s at room temperature. p-n Homojunction diodes we
re nearly ideal and could be modeled with a diffusion-controlled leaka
ge current using minority carrier lifetimes of tau(n) = tau(p) = 5 X 1
0(-9) s.