ELECTRONIC-PROPERTIES OF MULTIPLE SI DELTA-DOPED GAAS-LAYERS GROWN BYMOLECULAR-BEAM EPITAXY AND MIGRATION-ENHANCED EPITAXY

Authors
SHIBLI SM HENRIQUES AB MENDONCA CAC DASILVA ECF MENESES EA SCOLFARO LMR LEITE JR
Citation
Sm. Shibli et al., ELECTRONIC-PROPERTIES OF MULTIPLE SI DELTA-DOPED GAAS-LAYERS GROWN BYMOLECULAR-BEAM EPITAXY AND MIGRATION-ENHANCED EPITAXY, Journal of crystal growth, 127(1-4), 1993, pp. 700-702
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
700 - 702
Database
ISI
SICI code
0022-0248(1993)127:1-4<700:EOMSDG>2.0.ZU;2-3
Abstract
We report on comparative measurements of the electronic properties of multiple Si delta-doped GaAs structures grown by conventional molecula r beam epitaxy (MBE) and by migration-enhanced epitaxy (MEE) at a subs trate temperature of 540-degrees-C. Samples were studied by Shubnikov- De Haas and Hall measurements. Results suggest that for multiple delta -doped samples grown at high substrate temperatures, MBE is a more eff ective growth technique.