ERBIUM COMPLEXES AND DEFECT LEVELS IN MBE-GROWN ERBIUM-DOPED GAAS ANDALGAAS

Authors
ELSAESSER DW COLON JE YEO YK HENGEHOLD RL EVANS KR SOLOMON JS
Citation
Dw. Elsaesser et al., ERBIUM COMPLEXES AND DEFECT LEVELS IN MBE-GROWN ERBIUM-DOPED GAAS ANDALGAAS, Journal of crystal growth, 127(1-4), 1993, pp. 707-710
Citations number
13
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
707 - 710
Database
ISI
SICI code
0022-0248(1993)127:1-4<707:ECADLI>2.0.ZU;2-1
Abstract
Erbium doped GaAs and AlGaAs layers were grown using MBE at various Er concentrations. Low temperature photoluminescence (PL) measurements i ndicate that the most intense Er emissions occur near [Er] = 10(19) cm -3 and fall off sharply by [Er] = 6 X 10(19) cm-3. PL and lifetime mea surements indicate that there are at least 3 distinct optically active centers. Electrical measurements show that Er-related hole traps in G aAs are at 35, 150, and 340 meV above the valence band.