ON THE POTENTIAL OF DELTA-DOPING FOR ALINAS GAINAS HEMTS GROWN BY MBE

Authors
PASSENBERG W BACH HG BOTTCHER J KUNZEL H
Citation
W. Passenberg et al., ON THE POTENTIAL OF DELTA-DOPING FOR ALINAS GAINAS HEMTS GROWN BY MBE, Journal of crystal growth, 127(1-4), 1993, pp. 716-719
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
716 - 719
Database
ISI
SICI code
0022-0248(1993)127:1-4<716:OTPODF>2.0.ZU;2-I
Abstract
A theoretical and experimental comparison of homogeneously doped and d elta-doped electron supply regions in AlInAs/GaInAs HEMT structures is presented providing optimized design parameters. The electrical mater ial characteristics in dependence of the doping sheet concentration ar e assessed. Minimization of the HEMT sheet resistivity is attained by variation of the channel/delta-doping plane separation.