ELECTRICAL-PROPERTIES OF MBE GROWN LAYERS OF ALGAASSB AND THE EFFECTSOF PROTON IMPLANTATION AND HYDROGEN PLASMA TREATMENT

Electrical properties of MBE grown AlGaAsSb layers with various compos itions lattice matched to GaSb were studied. It is shown that donors i n AlSb-rich compositions are DX-like centers with thermal ionization e nergy around 0.1-0.2 eV. In undoped p-type layers, the properties of n ative acceptors are studied for various compositions. The effect of hy drogen plasma treatment on electrical properties of AlGaAsSb is report ed. Such treatment leads to very drastic decrease of the concentration of electrically active centers. For proton implantation we observe n- p conversion in n-type layers and some decrease of carrier concentrati on in p-type layers. In both cases after large proton doses the hole c oncentration in irradiated AlGaAsSb tends to approximately 10(16) cm-3 at room temperature.