M. Yano et al., RAMAN-SCATTERING ANALYSIS OF INAS GASB ULTRATHIN-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 127(1-4), 1993, pp. 807-811
Raman scattering analysis has been performed to study characteristic p
honon modes in InAs/GaSb ultrathin-layer superlattices (ULSs) grown by
molecular beam epitaxy. Either interface bond InSb or GaAs was select
ively made in the ULSs by controlling the beam supply sequence during
growth. In addition to the acoustic and optic phonons modulated by ULS
structure, the Raman spectra were composed of two different types of
new phonon mode localized at each interface of InSb or GaAs. These exp
erimental data have been understood in agreement with the theoretical
analysis.