The growth of (Al,Ga)As structures on both (110)-GaAs and the (110)-Ga
As surface exposed by in-situ cleaving of a (100)-GaAs substrate has b
een investigated. ''T-junctions'' of GaAs layers have been grown in tw
o growth steps where there is no discernible interface (as observed by
high resolution SEM) between the two layers. High intensity photolumi
nescence has been observed from quantum wells grown on (110)-GaAs wafe
rs at 480-degrees-C. The efficiency of p-type doping by beryllium has
been measured by the Hall effect. No differences between the doping le
vels and mobilities at both ambient temperature and 77 K have been mea
sured for (110) and (100) surfaces.