THE HOMOEPITAXIAL GROWTH OF ON-AXIS GAAS(111)A, (111)B AND (201) COMPARED WITH GAAS(100) - DOPING AND GROWTH TEMPERATURE STUDIES

Authors
WOOLF DA WILLIAMS JP WESTWOOD DI SOBIESIERSKI Z AUBREY JE WILLIAMS RH
Citation
Da. Woolf et al., THE HOMOEPITAXIAL GROWTH OF ON-AXIS GAAS(111)A, (111)B AND (201) COMPARED WITH GAAS(100) - DOPING AND GROWTH TEMPERATURE STUDIES, Journal of crystal growth, 127(1-4), 1993, pp. 913-917
Citations number
17
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
913 - 917
Database
ISI
SICI code
0022-0248(1993)127:1-4<913:THGOOG>2.0.ZU;2-8
Abstract
Si-doping and variable growth temperature studies have been performed in the on-axis homoepitaxial GaAs(111)A, (111)B and (201) materials sy stems. These studies are compared with the already extensively charact erized GaAs(100) orientation. It was demonstrated that the Si-doped n- type GaAs(111)B and (201) could be grown across the mid- 10(14) to 10( 18) cm-3 range, whereas the Si-doped GaAs(111)A was p-type and could b e doped from congruent-to 2 X 10(15) to = 5 X 10(17) cm-3 . The growth temperature studies revealed similar conducting/non-conducting transi tions in the GaAs(111)A, (111)B and (201) specimens as observed for Ga As(100).