SELECTIVE N-TYPE AND P-TYPE C-DOPING IN GA0.47IN0.53AS SUPERLATTICES

GaAs/InAs superlattices with a period of 8 molecular layers were grown by molecular beam epitaxy on InP substrates. Doping of the GaAs layer s and InAs layers with carbon (C) results in p-type and n-type conduct ivity of the superlattices, respectively. At free carrier concentratio ns of 10(16) cm -3, the carrier mobilities are 200 and 2300 cm2/V.s fo r p-type and n-type conductivity, respectively. Rectifying pn-junction characteristics are demonstrated for the Ga0.47In0.53As superlattices using C as the sole impurity species.