FACETED MBE GROWTH OF (GAAL)AS ON RIE PATTERNED SURFACES

(GaAl)As layers were regrown by molecular beam epitaxy on wafers patte rned by reactive ion etching with SiCl4. Excellent optical, electrical and morphological Properties were obtained for regrown material. Face t formation on nonplanar surfaces depends on adatom species, growth pa rameters and crystallographic planes. Regrowth on in-situ prepared AlG aAs surfaces was achieved after thermal desorption of thin GaAs passiv ation layers prior to the growth. The direct growth of buried heterost ructures, nanostructures and butt joints is demonstrated.