SELF-ORGANIZATION DURING SI INCORPORATION IN MBE-GROWN VICINAL GAAS(001) SURFACES

Authors
DAWERITZ L HAGENSTEIN K SCHUTZENDUBE P
Citation
L. Daweritz et al., SELF-ORGANIZATION DURING SI INCORPORATION IN MBE-GROWN VICINAL GAAS(001) SURFACES, Journal of crystal growth, 127(1-4), 1993, pp. 1051-1055
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
1051 - 1055
Database
ISI
SICI code
0022-0248(1993)127:1-4<1051:SDSIIM>2.0.ZU;2-Q
Abstract
The attachment kinetics of Si atoms at MiSorientation steps on vicinal GaAs(001) surfaces tilted toward the (111)Ga plane has been studied b y real-time RHEED measurements. For a misorientation of 2-degrees and a substrate temperature of 580-degrees-C it is demonstrated that a sel f-organized in-plane incorporation of Si atoms takes place. The surfac e with a wire-like arrangement of the Si atoms can be overgrown by GaA s without adverse effects on the growth front.