DIRECT EVIDENCE FOR NATIVE POINT-DEFECTS IN MBE-GROWN ALAS GAAS HETEROSTRUCTURES/

Authors
KRISPIN P HEY R KOSTIAL H HORICKE M
Citation
P. Krispin et al., DIRECT EVIDENCE FOR NATIVE POINT-DEFECTS IN MBE-GROWN ALAS GAAS HETEROSTRUCTURES/, Journal of crystal growth, 127(1-4), 1993, pp. 1073-1076
Citations number
6
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
1073 - 1076
Database
ISI
SICI code
0022-0248(1993)127:1-4<1073:DEFNPI>2.0.ZU;2-X
Abstract
The n-isotype AlAs/GaAs interface is studied by capacitance/voltage te chnique and deep-level transient spectroscopy in detail. It is found t hat electrically active defects are present mainly on the AlAs side of the inverted interface which lead to a strong depletion of carriers a t the heterointerface. It is shown for the first time that arsenic vac ancies (V(As)) and V(As)-related defects are formed during MBE growth of the AlAs/GaAs heterostructure.