ATOMIC-SCALE VIEW OF ALGAAS GAAS MULTILAYERS WITH CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY/

Authors
JOHNSON MB MAIER U MEIER HP SALEMINK H
Citation
Mb. Johnson et al., ATOMIC-SCALE VIEW OF ALGAAS GAAS MULTILAYERS WITH CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY/, Journal of crystal growth, 127(1-4), 1993, pp. 1077-1082
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
1077 - 1082
Database
ISI
SICI code
0022-0248(1993)127:1-4<1077:AVOAGM>2.0.ZU;2-8
Abstract
Atomically-resolved cross-sectional topographic images of AlGaAs/GaAs multilayers, which includes a sequence of 1, 2, 5, and 10 nm AlGaAs an d GaAs layers, have been made using a scanning tunneling microscope. A ll the layers appear distinct and the dimensions of the as-grown layer s can be accurately measured. Furthermore, alloy fluctuations and inte rface roughness over 2 nm length scales and ordering along certain dir ections are clearly observed.