PROGRESS TOWARD EXCIMER-LASER METAL PLANARIZATION AND VIA HOLE FILLING USING INSITU MONITORING

Citation
Pg. Carey et al., PROGRESS TOWARD EXCIMER-LASER METAL PLANARIZATION AND VIA HOLE FILLING USING INSITU MONITORING, Microelectronic engineering, 20(1-2), 1993, pp. 89-106
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
20
Issue
1-2
Year of publication
1993
Pages
89 - 106
Database
ISI
SICI code
0167-9317(1993)20:1-2<89:PTEMPA>2.0.ZU;2-Z
Abstract
Future high-density interconnect and multilevel metalization schemes w ill require planarized dielectric and metalization layers in order to satisfy stringent photolithographic and step coverage requirements. Ex cimer lasers represent one possible solution for metal planarization. Pulsed excimer lasers irradiate the metal layer with very short (pulse full width at half maximum FWHM almost-equal-to 25-40 ns) highly ener getic (up to 10 J cm-2) homogenized beams to melt an absorbing metal o verlayer. While molten, the surface is driven flat due to the surface tension and low viscosity of metals. In this work we review our excime r laser planarization work, introduce the concept of in-situ monitorin g to design a high-aspect-ratio contact hole filling planarization pro cess, and summarize prospects for future work.