MBE GROWTH AND MICROSTRUCTURAL EVALUATION OF ZN(S,SE)-BASED LEDS AND DIODE-LASERS

Authors
GRILLO DC XIE W KOBAYASHI M GUNSHOR RL HUA GC OTSUKA N JEON H DING J NURMIKKO AV
Citation
Dc. Grillo et al., MBE GROWTH AND MICROSTRUCTURAL EVALUATION OF ZN(S,SE)-BASED LEDS AND DIODE-LASERS, Journal of electronic materials, 22(5), 1993, pp. 441-444
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
22
Issue
5
Year of publication
1993
Pages
441 - 444
Database
ISI
SICI code
0361-5235(1993)22:5<441:MGAMEO>2.0.ZU;2-4
Abstract
The use of a nitrogen radio frequency plasma source together with an a ppropriate quantum well configuration have recently resulted in the su ccessful realization of p-type ZnSe by molecular beam epitaxy. This ha s enabled a variety of pn heterojunction based devices to be built inc luding the first semiconductor injection lasers operating in the blue/ green portion of the spectrum first reported by 3M and the Brown/Purdu e group. In this paper, we discuss two lattice matched multiple quantu m well structures that produce laser emission in the blue and blue/gre en portion of the spectrum.