GROWTH AND CHARACTERIZATION OF DIGITAL ALLOY QUANTUM-WELLS OF CDSE ZNSE

Authors
LUO H SAMARTH N YIN A PAREEK A DOBROWOLSKA M FURDYNA JK MAHALINGAM K OTSUKA N PEIRIS FC BUSCHERT JR
Citation
H. Luo et al., GROWTH AND CHARACTERIZATION OF DIGITAL ALLOY QUANTUM-WELLS OF CDSE ZNSE, Journal of electronic materials, 22(5), 1993, pp. 467-471
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
22
Issue
5
Year of publication
1993
Pages
467 - 471
Database
ISI
SICI code
0361-5235(1993)22:5<467:GACODA>2.0.ZU;2-E
Abstract
We report a study of digital alloy quantum wells of CdSe/ZnSe grown by migration enhanced epitaxy. The quantum well regions consist of vario us numbers of periods of one monolayer of CdSe and three monolayers of ZnSe, and the barriers are ZnSe. It will be shown that the optical pr operties of such quantum wells are greatly affected by the structural quality of the digital alloy. Both structural and optical properties w ill be discussed. Such digital alloy quantum wells are shown to have e xcellent room temperature optical characteristics.