LOW-THRESHOLD, ROOM-TEMPERATURE PULSED AND QUASI-CONTINUOUS LASING INOPTICALLY PUMPED CDZNTE ZNTE QUANTUM-WELLS

Authors
FELDMAN RD HARRIS TD ZUCKER JE LEE D AUSTIN RF JOHNSON AM
Citation
Rd. Feldman et al., LOW-THRESHOLD, ROOM-TEMPERATURE PULSED AND QUASI-CONTINUOUS LASING INOPTICALLY PUMPED CDZNTE ZNTE QUANTUM-WELLS, Journal of electronic materials, 22(5), 1993, pp. 479-484
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
22
Issue
5
Year of publication
1993
Pages
479 - 484
Database
ISI
SICI code
0361-5235(1993)22:5<479:LRPAQL>2.0.ZU;2-A
Abstract
We report room temperature optically pumped lasing with a threshold of 6 kW/cm2 in a CdZnTe/ZnTe multiple quantum well. Quasi-continuous opt ically pumped lasing at room temperature has also been achieved. We di scuss the influence of composition on mode confinement and show that t he lowest thresholds are expected in samples in which the active layer is slightly zinc-rich compared to the cladding layers.