CORRELATION OF THE LEAKAGE CURRENT AND CHARGE PUMPING IN SILICON-ON-INSULATOR GATE-CONTROLLED DIODES

The leakage and charge pumping currents are measured in gate-controlle d MOS p-i-n diodes fabricated on thin SIMOX substrates. The efficiency of either technique as well as their complementary features are analy zed for various experimental conditions. The interface properties of d evice-grade SIMOX wafers are characterized and shown to be compatible with VLSI requirements. Special interface coupling effects, which occu r only in fully depleted SOI devices and modify the conventional signa ture of charge pumping and leakage current, are thoroughly investigate d.