A NEW TECHNIQUE FOR MEASURING MOSFET INVERSION LAYER MOBILITY

We present a new experimental technique to accurately determine both t he inversion charge Q(i) and the channel mobility mu of a MOSFET. With this new technique, the inversion charge is measured as a function of the gate and drain voltages. This improvement allows the channel mobi lity to be extracted independent of drain voltage V(DS) over a wide ra nge of voltages (V(DS) = 20-100 mV). The resulting mu (V(GS)) curves f or different V(DS) show no drastic mobility roll-off at V(GS) near V(T H). This suggests that the roll-off seen in the mobility data extracte d using the split C-V method is probably due to inaccurate inversion c harge measurements instead of Coulombic scattering.