NOISE PROPERTIES OF ALGAAS GAAS MODFETS

Authors
ANWAR AFM LIU KW
Citation
Afm. Anwar et Kw. Liu, NOISE PROPERTIES OF ALGAAS GAAS MODFETS, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1174-1176
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
6
Year of publication
1993
Pages
1174 - 1176
Database
ISI
SICI code
0018-9383(1993)40:6<1174:NPOAGM>2.0.ZU;2-N
Abstract
An analytically tractable model is presented for the calculation of no ise Performance of a modulation-doped field-effect transistor (MODFET) . The charge control is based on the self-consistent solution of Schro dinger and Poisson's equation. An improved velocity-field characterist ic is used in the calculation. The fit provided by the developed theor y to the experimental data is excellent.