FORMATION OF HIGH-QUALITY OXIDE NITRIDE STACKED LAYERS ON RUGGED POLYSILICON ELECTRODES BY RAPID THERMAL-OXIDATION

Authors
ITOH S LO GQ KWONG DL MATHEWS VK FAZAN PC
Citation
S. Itoh et al., FORMATION OF HIGH-QUALITY OXIDE NITRIDE STACKED LAYERS ON RUGGED POLYSILICON ELECTRODES BY RAPID THERMAL-OXIDATION, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1176-1178
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
6
Year of publication
1993
Pages
1176 - 1178
Database
ISI
SICI code
0018-9383(1993)40:6<1176:FOHONS>2.0.ZU;2-9
Abstract
This brief demonstrates that the use of rapid thermal oxidation (RTO) of thin Si3N, films deposited on rugged poly-Si electrodes greatly imp roves reliability of the films, compared to conventional wet (steam) o xidation. Superior TDDB characteristics and suppression of capacitance loss during high-field stress have been achieved by RTO.