ELECTRON QUASI-FERMI LEVEL SPLITTING AT THE BASE EMITTER JUNCTION OF ALGAAS GAAS HBTS/

Authors
PULFREY DL SEARLES S
Citation
Dl. Pulfrey et S. Searles, ELECTRON QUASI-FERMI LEVEL SPLITTING AT THE BASE EMITTER JUNCTION OF ALGAAS GAAS HBTS/, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1183-1185
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
6
Year of publication
1993
Pages
1183 - 1185
Database
ISI
SICI code
0018-9383(1993)40:6<1183:EQLSAT>2.0.ZU;2-Z
Abstract
The amount of electron quasi-Fermi level splitting in the emitter-base junction of AlGaAs/GaAs single- and double- heterojunction bipolar tr ansistors is computed. The degree of splitting is found to be generall y small, and less pronounced in double-heterojunction devices. However , it is argued that the effect of the splitting on the current gain ma y be significant.