GROWTH OF YTTRIA AND DYSPROSIUM THIN-FILMS BY MOLECULAR-BEAM EPITAXY AND THEIR CHARACTERIZATION

Citation
Jc. Vyas et al., GROWTH OF YTTRIA AND DYSPROSIUM THIN-FILMS BY MOLECULAR-BEAM EPITAXY AND THEIR CHARACTERIZATION, Journal of crystal growth, 130(1-2), 1993, pp. 59-66
Citations number
23
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
130
Issue
1-2
Year of publication
1993
Pages
59 - 66
Database
ISI
SICI code
0022-0248(1993)130:1-2<59:GOYADT>2.0.ZU;2-S
Abstract
The thin film deposition of yttria (Y2O3) and dysprosium (Dy) on singl e crystal substrates of YSZ and SrTiO3 has been studied under MBE cond itions. Yttria is found to be very stable under electron beam evaporat ion. Depending upon the growth temperatures, two growth regimes which give rise to epitaxial growth of Y2O3 on [100]YSZ substrates and predo minantly oriented films along [222] are identified. In the case of Dy films on [100]SrTiO3 substrates, for growth temperatures above 600-deg rees-C the growth orientation is found to be [101], whereas below this temperature the films are polycrystalline in nature. ESCA measurement s made on Dy films reveal their special affinity to oxygen.