GROWTH OF HG1-XCDXTE SINGLE-CRYSTALS BY TRAVELING HEATER METHOD UNDERACCELERATED CRUCIBLE ROTATION CONDITIONS

The accelerated crucible rotation technique (ACRT) has been applied to the THM growth of Hg1-xCdxTe crystals to grow the crystals at a highe r rate. These higher growth rates, which should be achieved by extendi ng the regions of convectional stirring towards the interfaces, have b een used in an attempt to explain the results in terms of simple const itutional supercooling arguments. Some different ACRT cycles which ful fil simple hydrodynamic and geometric criteria have been studied. The grown crystals were investigated with respect to their metallurgical h omogeneity and their structural perfection. These properties have not been degraded by increasing the growth rate from 1.5 to 8.5 mm per day .