CORRELATION BETWEEN SUBSTITUTION AND INTERSTITIAL DOPING IN ZNXHG1-XTE

Authors
AOURAG H HAMMADI M KHELIFA B
Citation
H. Aourag et al., CORRELATION BETWEEN SUBSTITUTION AND INTERSTITIAL DOPING IN ZNXHG1-XTE, Materials chemistry and physics, 33(3-4), 1993, pp. 197-203
Citations number
6
Categorie Soggetti
Material Science
Journal title
Materials chemistry and physics → ACNP
ISSN journal
02540584
Volume
33
Issue
3-4
Year of publication
1993
Pages
197 - 203
Database
ISI
SICI code
0254-0584(1993)33:3-4<197:CBSAID>2.0.ZU;2-B
Abstract
On the basis of Gaussian nonlocal pseudopotential and virtual crystal approximation methods, the valence and conduction band charge densitie s at different high symmetry points are calculated. The bonding proper ties and the effect of interstitial impurities on the modification of the band structure of the system ZnxHg1-xTe are explained. The effect of the substitution is correlated to this interstitial.