Tm. Wu et al., TEMPERATURE-DEPENDENCE OF THE OXIDATION RESISTANCE OF SIC COATED CARBON-CARBON COMPOSITE, Materials chemistry and physics, 33(3-4), 1993, pp. 208-213
The oxidation of SiC coated carbon/carbon composite (C/C) is studied a
nd correlated to the surface stress conditions. Based on the calculati
on, the thermal stress induced from the difference in coefficient of t
hermal expansion (CTE) between the C/C substrate and the SiC coating i
s as large as a few hundred MPa when the variation of processing tempe
rature is more than 1200-degrees-C, which is enough for the occurrence
of microcracks in the SiC coating layer. The analysis of stress distr
ibution reveals that a lower reaction sintering temperature and a thic
ker SiC coating layer are preferred to avoid the occurrence of microcr
acks. But cracking seems inevitable if the reaction sintering of the S
iC layer is processed above 1400-degrees-C to produce a SiC coating fo
llowed by cooling to room temperature. An in situ measurement of the o
xidation weight loss of coated C/C demonstrates that the abnormal vari
ation of oxidation rate with respect to the test temperature is consis
tent with the prediction of closure of the stress-induced microcracks
in the SiC coatings.