TI PT/AU-SN METALLIZATION SCHEME FOR BONDING OF INP-BASED LASER-DIODES TO CHEMICAL-VAPOR-DEPOSITED DIAMOND SUBMOUNTS/

Authors
KATZ A WANG KW BAIOCCHI FA DAUTREMONTSMITH WC LANE E LUFTMAN HS VARMA RR CURNAN H
Citation
A. Katz et al., TI PT/AU-SN METALLIZATION SCHEME FOR BONDING OF INP-BASED LASER-DIODES TO CHEMICAL-VAPOR-DEPOSITED DIAMOND SUBMOUNTS/, Materials chemistry and physics, 33(3-4), 1993, pp. 281-288
Citations number
17
Categorie Soggetti
Material Science
Journal title
Materials chemistry and physics → ACNP
ISSN journal
02540584
Volume
33
Issue
3-4
Year of publication
1993
Pages
281 - 288
Database
ISI
SICI code
0254-0584(1993)33:3-4<281:TPMSFB>2.0.ZU;2-W
Abstract
A layered structure (consisting of Ti(100 nm)/Pt(200 nm)/Au(500 nm) an d Au-Sn (2.5 mum total in multiple alternating layers)) was studied as a bonding scheme for InP-based laser diodes to chemical vapor deposit ed (CVD) diamond substrates. This structure provided a molten Au-Sn la yer of eutectic composition (80:20 wt.%) on top of the Ti/Pt adhesion and barrier metals for about 6 s in the temperature range 300-350-degr ees-C and allowed for efficient bonding of the device to the substrate . Longer heating durations allowed a reaction between the Pt and Sn to consume significant amounts of Sn from the solder, thus elevating its melting temperature and resolidifying the solder. With optimum bondin g conditions, a high-quality bond of the InP-based laser diode to the CVD diamond substrate was observed, and the electrical performance of the diode was superior to that of diodes that were bonded with the sta ndard In/BeO configurations.