DOPING OF 3C-SIC BY IMPLANTATION OF NITROGEN AT HIGH-TEMPERATURES

Doping profiles and electrical properties are investigated on SiC samp les doped with single energy implants from nitrogen. The profiles are analysed using Pearson distributions for different implantation energi es and temperatures. Implantations are performed for temperatures up t o 1200 degrees C. Diffusion during high temperature implantation is in vestigated and the diffusion coefficients measured range from 1.09 x 1 0(-15) to 1.53 x 10(-14)cm(2)/s depending on temperature. The activati on energy for implantation enhanced diffusion is estimated to be 0.91 eV. A comparison is made with diffusion during annealing. The activate d dopants from high temperature implantation are investigated by the H all probe method, showing that activation and mobility increase with t emperature.