A SILICON-CARBIDE LOGOS PROCESS USING ENHANCED THERMAL-OXIDATION BY ARGON IMPLANTATION

Authors
ALOK D BALIGA BJ
Citation
D. Alok et Bj. Baliga, A SILICON-CARBIDE LOGOS PROCESS USING ENHANCED THERMAL-OXIDATION BY ARGON IMPLANTATION, Journal of electronic materials, 26(3), 1997, pp. 134-136
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
26
Issue
3
Year of publication
1997
Pages
134 - 136
Database
ISI
SICI code
0361-5235(1997)26:3<134:ASLPUE>2.0.ZU;2-0
Abstract
A process is described for creating local oxidation of silicon structu re (LOGOS) structures in silicon carbide using enhanced thermal oxidat ion by argon implantation. Thicker oxides were created in selective re gions by using multiple energy argon implants at a dose of 1 x 10(15) cm(-2) prior to thermal oxidation. Atomic force microscopy was used to analyze the fabricated LOGOS structure.