AN EPR STUDY OF DEFECTS INDUCED IN 6H-SIC BY ION-IMPLANTATION

Crystalline (0001) plane wafers of n-type 6H-SiC have been implanted a t room temperature with 200 keV Ge+ ions in the dose range 10(12) to 1 0(15) cm(-2). Electron paramagnetic resonance (EPR) measurements have been made on these samples both before and after annealing them at tem peratures in the range room temperature to 1500 degrees C. The as-impl anted samples have a single isotropic and asymmetric line EPR spectrum whose width, Delta B-pp, increases with ion dose before falling when a buried continuous amorphous layer is produced. This increase is inte rpreted in terms of the change in the relative intensity of a line wit h g = 2.0028 +/- 0.0002, Delta B-pp = 0.4 mT associated primarily with carbon dangling bonds in a-SiC and a line with g in the range 2.0033 to 2.0039 of uncertain origin. The variation with anneal temperature o f the populations of these defects is reported.