RAPID THERMAL ANNEALING OF ION-IMPLANTED 6H-SIC BY MICROWAVE PROCESSING

Rapid thermal processing utilizing microwave energy has been used to a nneal N, P, and Al ion-implanted 6H-SiC. The microwaves raise the temp erature of the sample at a rate of 200 degrees C/min vs 10 degrees C/m in for conventional ceramic furnace annealing. Samples were annealed i n the temperature range of 1400-1700 degrees C for 2-10 min. The impla nted/annealed samples were characterized using van der Pauw Hall, Ruth erford backscattering, and secondary ion mass spectrometry. For a give n annealing temperature, the characteristics of the microwave annealed material are similar to those of conventional furnace anneals despite the difference in cycle time.