Kj. Schoen et al., ELECTRICAL-PROPERTIES OF METAL-DIAMOND-LIKE-NANOCOMPOSITE (ME-DLN) CONTACTS TO 6H SIC, Journal of electronic materials, 26(3), 1997, pp. 193-197
We have fabricated tungsten-diamond-like-nanocomposite (W-DLN) Schottk
y contacts on n-type and p-type 6H SiC (Si-face). The as-deposited n-t
ype and p-type contacts are rectifying and measurement results suggest
that the electrical characteristics are dominated by the properties o
f the tungsten SiC interface. The n-type contacts have a reverse leaka
ge current density of 4.1 x 10(-3) Acm(-2) and the p-type contacts hav
e a reverse leakage current density of 1.4 x 10(-7) Acm(-2) at -10 V.
The n-type contacts have an current-voltage (I-V) extracted effective
phi(Bn) of 0.7 eV with an ideality factor of 1.2 and a capacitance-vol
tage (C-V) extracted phi(Bn) of 1.2 eV. The p-type contacts have an I-
V extracted effective phi(Bn) of 1.8 eV with an ideality factor of 1.7
. Non-ideal I-V and C-V characteristics may be due to surface damage d
uring W-DLN deposition.