ELECTRICAL-PROPERTIES OF METAL-DIAMOND-LIKE-NANOCOMPOSITE (ME-DLN) CONTACTS TO 6H SIC

We have fabricated tungsten-diamond-like-nanocomposite (W-DLN) Schottk y contacts on n-type and p-type 6H SiC (Si-face). The as-deposited n-t ype and p-type contacts are rectifying and measurement results suggest that the electrical characteristics are dominated by the properties o f the tungsten SiC interface. The n-type contacts have a reverse leaka ge current density of 4.1 x 10(-3) Acm(-2) and the p-type contacts hav e a reverse leakage current density of 1.4 x 10(-7) Acm(-2) at -10 V. The n-type contacts have an current-voltage (I-V) extracted effective phi(Bn) of 0.7 eV with an ideality factor of 1.2 and a capacitance-vol tage (C-V) extracted phi(Bn) of 1.2 eV. The p-type contacts have an I- V extracted effective phi(Bn) of 1.8 eV with an ideality factor of 1.7 . Non-ideal I-V and C-V characteristics may be due to surface damage d uring W-DLN deposition.