HYDROGEN PASSIVATION IN N-TYPE AND P-TYPE 6H-SIC

Hydrogen passivation effects are found to be much more prevalent in p- type 6H-SiC relative to n-type material. Reactivation of passivated B accepters occurs at similar to 700 degrees C, corresponding to a react ivation energy of similar to 3.3 eV. This is much higher than for pass ivated accepters in Si, where reactivation occurs at less than or equa l to 200 degrees C. The incorporation depth of H-2 from a plasma at 20 0 degrees C is less than or equal to 0.1 mu m in 30 min, corresponding to a diffusivity approximately two orders of magnitude lower than in Si at the same temperature. The average energy of ions in the H-2 plas ma has an influence on the peak concentration of incorporated deuteriu m and on its diffusion depth.