METALORGANIC CHEMICAL-VAPOR DEPOSITION-GROWN ALN ON 6H-SIC FOR METAL-INSULATOR-SEMICONDUCTOR DEVICE APPLICATIONS

Aluminum nitride is a promising insulator for the fabrication of 6H-si licon carbide (6H-SiC) metal-insulator-semiconductor (MIS) devices for high temperature and high power applications. Due to the fact that th e electrical response of a Au/AlN/SiC MIS structure is sensitive to th e quality of the insulator semiconductor interface as well as the insu lator itself, growth of AlN on 6H-SiC using different growth procedure s will produce AlN/6H-SiC structures of different electrical character istics. In this study, we compared the capacitance-voltage, de current voltage and high electric field breakdown characteristics of various AlN/6H-SiC MIS structures grown by different low-pressure metalorganic chemical vapor deposition growth procedures. Our results demonstrated that depending on the growth procedure, Au/AlN/SiC MIS structures wit h low current leakage, low interface state density, good high temperat ure stability and high electric field breakdown voltage could be obtai ned.