MOVPE GROWTH AND OPTICAL-PROPERTIES OF GAN DEPOSITED ON C-PLANE SAPPHIRE

Authors
BRIOT O GIL B TCHOUNKEU M AULOMBARD RL DEMANGEOT F FRANDON J RENUCCI M
Citation
O. Briot et al., MOVPE GROWTH AND OPTICAL-PROPERTIES OF GAN DEPOSITED ON C-PLANE SAPPHIRE, Journal of electronic materials, 26(3), 1997, pp. 294-300
Citations number
24
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
26
Issue
3
Year of publication
1997
Pages
294 - 300
Database
ISI
SICI code
0361-5235(1997)26:3<294:MGAOOG>2.0.ZU;2-J
Abstract
We address combined utilization of temperature dependent reflectance, photoluminescence, and Raman spectroscopy measurements to optimize the structural and electronic properties of GaN epilayers deposited on sa pphire. Last, we study residual strain fields in such epilayers.