Mo. Debeeck et al., TOPOGRAPHICAL MASKS - A NEW APPROACH TO INCREASE THE DOF ON TOPOGRAPHICAL SUBSTRATES, Microelectronic engineering, 21(1-4), 1993, pp. 19-24
With shrinking design rules, the DOF becomes a major concern in lithog
raphical processes. Several methods to improve the DOF are proposed al
ready, each with its advantages and drawbacks. In this work, a new app
roach to increase the DOF on topographical substrates is introduced: t
he topographical mask. Two types of topographical masks are subject of
investigation. The fabrication of such masks is more complicated comp
ared to conventional mask making, but the lithographic performance of
the topographical masks is excellent. Therefore, this new technology o
ffers interesting possibilities on topographical substrates.