REDUCTION OF LINEWIDTH VARIATION FOR THE GATE CONDUCTOR LEVEL BY LITHOGRAPHY BASED ON A NEW ANTIREFLECTIVE LAYER

Authors
CZECH G MADER L KUSTERS KH KUPPERS P GUTMANN A
Citation
G. Czech et al., REDUCTION OF LINEWIDTH VARIATION FOR THE GATE CONDUCTOR LEVEL BY LITHOGRAPHY BASED ON A NEW ANTIREFLECTIVE LAYER, Microelectronic engineering, 21(1-4), 1993, pp. 51-56
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
21
Issue
1-4
Year of publication
1993
Pages
51 - 56
Database
ISI
SICI code
0167-9317(1993)21:1-4<51:ROLVFT>2.0.ZU;2-C
Abstract
An antireflective bilayer consisting of a-SiN on top of a-Si has been developed in particular for the application over gate level topography with a TEOS/polySi substrate stack furnishing high substrate reflecti vity, especially in case of i-line exposure. The increase in complexit y of the optimized overall-process seems acceptable in view of the dis tinctly reduced CD variations obtained with 16M g- and i-line lots whe n compared to the standard technique using dyed resist.