PATTERN PLACEMENT METROLOGY ON X-RAY MASKS

Citation
Sc. Nash et al., PATTERN PLACEMENT METROLOGY ON X-RAY MASKS, Microelectronic engineering, 21(1-4), 1993, pp. 83-86
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
21
Issue
1-4
Year of publication
1993
Pages
83 - 86
Database
ISI
SICI code
0167-9317(1993)21:1-4<83:PPMOXM>2.0.ZU;2-N
Abstract
Metrology is a key function in the evaluation of new manufacturing tec hnology and processes. Meeting the pattern placement requirements for the 256 Mbit DRAM technology with 0.25 mum minimum feature size on 1:1 x-ray masks is a development challenge. Pattern placement measurement s on structures in the range between 0.25 mum and 15 mum are reported using the Leitz LMS 2000 slightly modified to be able to handle x-ray masks automatically without using a special mask holding frame.